 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Silizium-PIN-Fotodiode Silicon PIN Photodiode BPW 34 S Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 0.2 0.9 0.7 GEO06863 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q geeignet fur Vapor-Phase Loten und IRReflow-Loten (JEDEC level 4) Anwendungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb q IR-Fernsteuerungen q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Application q Photointerrupters q IR remote controls q Industrial electronics q For control and drive circuits Typ Type BPW 34 S Bestellnummer Ordering Code Q62702-P1602 Semiconductor Group 1 1997-11-19 feo06862 Photosensitive area 2.65 mm x 2.65 mm Cathode lead 4.0 3.7 1.7 1.5 0...5 BPW 34 S Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Top; Tstg VR Ptot Wert Value - 40 ... + 85 32 150 Einheit Unit C V mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Symbol Symbol S S max Wert Value 80 ( 50) 850 400 ... 1100 Einheit Unit nA/Ix nm nm A LxB LxW H 7.00 2.65 x 2.65 mm2 mm 0.3 mm IR S 60 2 ( 30) 0.62 0.90 Grad deg. nA A/W Electrons Photon Semiconductor Group 2 1997-11-19 BPW 34 S Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 10 V, = 850 nm Detection limit Symbol Symbol VO ISC tr, tf Wert Value 365 ( 300) 80 10 Einheit Unit mV A ns VF C0 TCV TCI NEP 1.3 72 - 2.6 0.18 4.1 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.6 x 1012 Semiconductor Group 3 1997-11-19 BPW 34 S Relative spectral sensitivity Srel = f () 100 OHF00078 Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage VO = f (Ev) 10 3 OHF01066 Total power dissipation Ptot = f (TA) 10 4 mV S rel % 80 P A VO 10 3 160 mW Ptot 140 120 100 OHF00958 10 2 VO 60 10 1 40 P 10 2 80 60 20 10 0 10 1 40 20 0 400 500 600 700 800 900 nm 1100 10 -1 10 0 10 1 10 2 10 0 10 3 lx 10 4 EV 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R pA C pF 80 R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-19 |
Price & Availability of BPW34S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |